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 MKP9V160
Preferred Device
Sidac High Voltage
Bidirectional Triggers
Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state to a low voltage on-state. Conduction will continue like a Triac until the main terminal current drops below the holding current. The plastic axial lead package provides high pulse current capability at low cost. Glass passivation insures reliable operation.
Features
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SIDACS ( ) 0.9 AMPS RMS, 160 VOLTS
MT1 MT2
* * * * * * * *
High Pressure Sodium Vapor Lighting Strobes and Flashers Ignitors High Voltage Regulators Pulse Generators Used to Trigger Gates of SCR's and Triacs Indicates UL Registered - File #E116110 Pb-Free Package is Available
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (Sine Wave, 50 to 60 Hz, TJ = - 40 to 125C) On-State Current RMS (TL = 80C, Lead Length = 3/8 All Conduction Angles) Peak Non-repetitive Surge Current (60 Hz One Cycle Sine Wave, TJ = 125C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM IT(RMS) Value "90 "0.9 Unit V A
DO-41 AXIAL LEAD CASE 59 STYLE 2
ITSM TJ Tstg Symbol RqJL TL
"4.0 -40 to +125 -40 to +150
A C C
MARKING DIAGRAM
A MKP 9V160 YYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Rating Thermal Resistance, Junction-to-Lead Lead Length = 3/8 Lead Solder Temperature (Lead Length w 1/16 from Case, 10 s Max) Max 40 260 Unit C/W C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device MKP9V160RL MKP9V160RLG Package Axial Lead* Axial Lead* Shipping 5000 Tape & Reel 5000 Tape & Reel
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2006
February, 2006 - Rev. 1
1
Publication Order Number: MKP9V160/D
MKP9V160
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted; Electricals apply in both directions)
Characteristic OFF CHARACTERISTICS Repetitive Peak Off-State Current (50 to 60 Hz Sine Wave) ON CHARACTERISTICS Breakover Voltage IBO = 200 mA Peak On-State Voltage (ITM = 1 A Peak, Pulse Width 300 ms, Duty Cycle 2%) Dynamic Holding Current (Sine Wave, 50 to 60 Hz, RL = 100 W) Switching Resistance (Sine Wave, 50 to 60 Hz) DYNAMIC CHARACTERISTICS Critical Rate-of-Rise of On-State Current, Critical Damped Waveform Circuit (IPK = 130 A, Pulse Width = 10 msec) di/dt - 120 - A/ms VBO VTM IH RS 150 - - 0.1 - 1.3 - - 170 1.5 100 - V V mA kW TJ = 25C VDRM = 90 V IDRM - - 5.0 mA Symbol Min Typ Max Unit
Voltage Current Characteristic of SIDAC (Bidirectional Device)
+ Current
Symbol
IDRM VDRM VBO IBO IH VTM ITM
Parameter
Off State Leakage Current Off State Repetitive Blocking Voltage Breakover Voltage Breakover Current Holding Current On State Voltage Peak on State Current
ITM IH
VTM
Slope = RS
IS IDRM VDRM VS I(BO) + Voltage V(BO)
RS +
(V (BO) - V S) (I S - I (BO))
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2
MKP9V160
TL , MAXIMUM ALLOWABLE LEAD TEMPERATURE ( C) 140 IT(RMS) , ON-STATE CURRENT (AMPS) 130 120 110 100 90 80 70 60 50 40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 IT(RMS), ON-STATE CURRENT (AMPS) TA, MAXIMUM AMBIENT TEMPERATURE (C) TJ = 125C Sine Wave Conduction Angle = 180C TL
3/ 8 3/ 8
1.0 TJ = 125C Sine Wave Conduction Angle = 180C Assembled in PCB Lead Length = 3/8
0.8
0.6
0.4
0.2
Figure 1. Maximum Lead Temperature
I T , INSTANTANEOUS ON-STATE CURRENT (AMPS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0 1.0 2.0 3.0 4.0 5.0 0 TJ = 25C 125C 1.25 PRMS , POWER DISSIPATION (WATTS)
Figure 2. Maximum Ambient Temperature
1.00
TJ = 25C Conduction Angle = 180C
0.75
0.50
0.25
0.2
0.4
0.6
0.8
1.0
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
IT(RMS), ON-STATE CURRENT (AMPS)
Figure 3. Typical On-State Voltage
Figure 4. Typical Power Dissipation
THERMAL CHARACTERISTICS
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 ZqJL(t) = RqJL * r(t) DTJL = Ppk RqJL[r(t)] tp TIME where: DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t from this figure. For example, r(tp) = normalized value of transient resistance at time tp. 5.0 10 20 t, TIME (ms) 50 100 200 The temperature of the lead should be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + DTJL 500 1.0 k 2.0 k 5.0 k 10 k
Figure 5. Thermal Response
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3
MKP9V160
VBO , BREAKOVER VOLTAGE (NORMALIZED) 1.4 IH , HOLDING CURRENT (NORMALIZED)
1.0
1.2
1.0
0.9
0.8
0.6 0.4 -60
0.8 -60
-40
-20
0
20
40
60
80
100
120
140
-40
-20
0
20
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 6. Typical Breakover Voltage
Figure 7. Typical Holding Current
100
IPK, PEAK CURRENT (AMPS)
10
IPK
10% tw 1.0 0.1 1.0 tw, PULSE WIDTH (ms) 10 100
Figure 8. Pulse Rating Curve
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4
MKP9V160
PACKAGE DIMENSIONS
AXIAL LEAD CASE 59-10 ISSUE U
B
K F
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO-41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. DIM A B D F K INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 --- 0.050 1.000 --- NO POLARITY MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 --- 1.27 25.40 ---
D
A
POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES)
F K
STYLE 2:
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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5
MKP9V160/D


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